发明名称 |
SINGLE CRYSTALLINE SILICON WAFERS AND METHOD OF PREPARING THE SAME |
摘要 |
<p>PURPOSE: A single-crystalline silicon wafer and a manufacturing method thereof are provided to maximize absorption volume of sunlight by forming the side in order to have a surface consisting of multiple pyramids. CONSTITUTION: The side(S2) of a pyramid comprises a curved surface ranging from one peak(a2) to a bottom surface. A single-crystalline silicon wafer has a surface in which the pyramid is repeatedly formed. The curved surface is convexly formed towards a center portion of the pyramid. The single-crystalline silicon wafer is manufactured without using a mask for etching. The single-crystalline silicon wafer is texture-etched using an etchant composition.</p> |
申请公布号 |
KR20120135870(A) |
申请公布日期 |
2012.12.17 |
申请号 |
KR20120059142 |
申请日期 |
2012.06.01 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
LEE, JAE YOUN;PARK, MYUN KYU;HONG, HYUNG PYO;JIN, YOUNG JUN |
分类号 |
H01L31/04;H01L31/0236;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|