发明名称 SINGLE CRYSTALLINE SILICON WAFERS AND METHOD OF PREPARING THE SAME
摘要 <p>PURPOSE: A single-crystalline silicon wafer and a manufacturing method thereof are provided to maximize absorption volume of sunlight by forming the side in order to have a surface consisting of multiple pyramids. CONSTITUTION: The side(S2) of a pyramid comprises a curved surface ranging from one peak(a2) to a bottom surface. A single-crystalline silicon wafer has a surface in which the pyramid is repeatedly formed. The curved surface is convexly formed towards a center portion of the pyramid. The single-crystalline silicon wafer is manufactured without using a mask for etching. The single-crystalline silicon wafer is texture-etched using an etchant composition.</p>
申请公布号 KR20120135870(A) 申请公布日期 2012.12.17
申请号 KR20120059142 申请日期 2012.06.01
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 LEE, JAE YOUN;PARK, MYUN KYU;HONG, HYUNG PYO;JIN, YOUNG JUN
分类号 H01L31/04;H01L31/0236;H01L31/18 主分类号 H01L31/04
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