| 摘要 |
<p>An RF impedance transformer having a parallel low-impedance access Eb and serial high-impedance access Eh and intended for connection onto a printed circuit. The transformer includes a multilayer circuit that includes a long side and at least three layers. A first outer layer is separated from a second outer layer of the same thickness by at least one inner layer having a thickness at least four times greater than the thickness of the outer layers, each outer layer comprising an electrical conductor on each surface for forming a microstrip line, the serial high-impedance access Eh and the parallel low-impedance access Eb being on the long side of the multilayer circuit and near to each other so as to limit the area for connection with the printed circuit.</p> |
