发明名称 |
NITRIDE NANOWIRES AND METHOD OF PRODUCING SUCH |
摘要 |
<p>The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.</p> |
申请公布号 |
HK1142717(A1) |
申请公布日期 |
2012.12.14 |
申请号 |
HK20100109013 |
申请日期 |
2010.09.21 |
申请人 |
QUNANO AB |
发明人 |
SEIFERT, WERNER;ASOLI, DAMIR;ZHAOXIA, BI |
分类号 |
B82B;C30B;H01L |
主分类号 |
B82B |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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