发明名称 |
PHOTODIODE, METHOD FOR MANUFACTURING SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER, AND DEVICE FOR IMAGING SOLIDS |
摘要 |
A photodiode provided with a high-concentration layer on the surface thereof, the high-concentration layer being formed so that the thickness of an un-depleted region is greater than that of irregularities in the interface between silicon and an insulating film layer, and less than the penetration depth of ultraviolet light. |
申请公布号 |
WO2012169462(A1) |
申请公布日期 |
2012.12.13 |
申请号 |
WO2012JP64394 |
申请日期 |
2012.06.04 |
申请人 |
TOHOKU UNIVERSITY;SHIMADZU CORPORATION;SUGAWA, SHIGETOSHI;KURODA, RIHITO |
发明人 |
SUGAWA, SHIGETOSHI;KURODA, RIHITO |
分类号 |
H01L31/10;G01J3/36;H01L27/146 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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