发明名称 PHOTODIODE, METHOD FOR MANUFACTURING SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER, AND DEVICE FOR IMAGING SOLIDS
摘要 A photodiode provided with a high-concentration layer on the surface thereof, the high-concentration layer being formed so that the thickness of an un-depleted region is greater than that of irregularities in the interface between silicon and an insulating film layer, and less than the penetration depth of ultraviolet light.
申请公布号 WO2012169462(A1) 申请公布日期 2012.12.13
申请号 WO2012JP64394 申请日期 2012.06.04
申请人 TOHOKU UNIVERSITY;SHIMADZU CORPORATION;SUGAWA, SHIGETOSHI;KURODA, RIHITO 发明人 SUGAWA, SHIGETOSHI;KURODA, RIHITO
分类号 H01L31/10;G01J3/36;H01L27/146 主分类号 H01L31/10
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