SYSTEMS AND METHODS FOR CURRENT DENSITY OPTIMIZATION IN CMOS-INTEGRATED MEMS CAPACITIVE DEVICES
摘要
<p>The present subject matter relates to the use of current splitting and routing techniques to distribute current uniformly among the various layers of a device to achieve a high Q-factor. Such current splitting can allow the use of relatively narrow interconnects and feeds while maintaining a high Q. Specifically, for example a micro-electromechanical systems (MEMS) device can comprise a metal layer comprising a first portion and a second portion that is electrically separated from the first portion. A first terminus can be independently connected to each of the first portion and the second portion of the metal layer, wherein the first portion defines a first path between the metal layer and the first terminus, and the second portion defines a second path between the metal layer and the first terminus.</p>
申请公布号
WO2012170748(A2)
申请公布日期
2012.12.13
申请号
WO2012US41436
申请日期
2012.06.07
申请人
WISPRY, INC.;MORRIS, ARTHUR, S., III;NATARAJAN, SARAVANA;DEREUS, DANA
发明人
MORRIS, ARTHUR, S., III;NATARAJAN, SARAVANA;DEREUS, DANA