发明名称 SYSTEMS AND METHODS FOR CURRENT DENSITY OPTIMIZATION IN CMOS-INTEGRATED MEMS CAPACITIVE DEVICES
摘要 <p>The present subject matter relates to the use of current splitting and routing techniques to distribute current uniformly among the various layers of a device to achieve a high Q-factor. Such current splitting can allow the use of relatively narrow interconnects and feeds while maintaining a high Q. Specifically, for example a micro-electromechanical systems (MEMS) device can comprise a metal layer comprising a first portion and a second portion that is electrically separated from the first portion. A first terminus can be independently connected to each of the first portion and the second portion of the metal layer, wherein the first portion defines a first path between the metal layer and the first terminus, and the second portion defines a second path between the metal layer and the first terminus.</p>
申请公布号 WO2012170748(A2) 申请公布日期 2012.12.13
申请号 WO2012US41436 申请日期 2012.06.07
申请人 WISPRY, INC.;MORRIS, ARTHUR, S., III;NATARAJAN, SARAVANA;DEREUS, DANA 发明人 MORRIS, ARTHUR, S., III;NATARAJAN, SARAVANA;DEREUS, DANA
分类号 B81B3/00;H01G5/16;H01H59/00 主分类号 B81B3/00
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