METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE

摘要

Provided is a method that is for producing a semiconductor substrate and that has: a step for forming on a base substrate a compound semiconductor layer by means of epitaxial growth; a step for cleaning the surface of the compound semiconductor layer by means of a cleaning liquid containing a selenium compound; and a step for forming an insulating layer on the surface of the compound semiconductor layer. An oxide of selenium can be cited as the selenium compound. H2SeO­3 can be cited as the oxide of selenium. The cleaning liquid may further contain at least one substance selected from the group consisting of water, ammonia, and ethanol. If the surface of the compound semiconductor layer comprises InxGa1-xAs (0 = x = 1), the insulating layer preferably comprises Al2O3, and the Al2O3 preferably is formed by means of the ALD method.