发明名称 CHARGED PARTICLE BEAM DEVICE AND SAMPLE PRODUCTION METHOD
摘要 <p>Provided are a charged particle beam device and sample production method, with which, in FIB processing which is sample dependent, it is possible to carry out efficient processing to obtain a desired shape without the individual differences of workers affecting the processing. The charged particle beam device has mounted therein: an ion beam optical system device for irradiating a sample with an ion beam generated by an ion source, and a device for controlling the ion beam optical system device; an element detector for detecting the constituent element of the sample, and a device for controlling the element detector; and a central processing device for automatically setting processing conditions for the sample on the basis of the element specified by the element detector.</p>
申请公布号 WO2012169323(A1) 申请公布日期 2012.12.13
申请号 WO2012JP62469 申请日期 2012.05.16
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION;NANRI TERUTAKA;TOMIMATSU SATOSHI 发明人 NANRI TERUTAKA;TOMIMATSU SATOSHI
分类号 H01J37/317;H01J37/30;H01J37/304 主分类号 H01J37/317
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