SHOWER PLATE MANUFACTURING METHOD, SHOWER PLATE, AND VAPOR-PHASE GROWTH APPARATUS UTILIZING SAME

摘要

The method for manufacturing the shower plate (113) used for the vapor-phase growth apparatus (100) comprises: a step in which through holes (1031a, 1032a) having spot-faced step sections (1031b, 1032b) are created respectively on a first constituent member (1031) and a second constituent member (1032); a step in which one end of the gas discharge pipes (1033) are inserted into the spot-faced step sections (1031b); a step in which the gas discharge pipes are inserted into the through holes (1032a) such that the other end of the gas discharge pipes projects from the second constituent member; a step in which the spot-faced step sections (1031b) and the gas discharge pipes are welded together; a step in which the spot-faced step sections (1032b) and the gas discharge pipes are welded together; and a step in which the first constituent member (1031) and the second constituent member (1032) are welded together. The shower plate (113) is capable of handling larger vapor-phase growth apparatuses and contributes to the manufacturing of excellent semiconductor devices that have a uniform film thickness and a uniform component ratio.