| 发明名称 |
AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new amorphous oxide applicable to an active layer of a TFT or the like. <P>SOLUTION: An amorphous oxide is characterized in that it comprises microcrystal, that its composition changes in a layer thickness direction, or that it contains predetermined material. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012248853(A) |
申请公布日期 |
2012.12.13 |
| 申请号 |
JP20120148444 |
申请日期 |
2012.07.02 |
| 申请人 |
CANON INC;TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
NAKAGAWA KATSUMI;SANO MASAFUMI;HOSONO HIDEO;KAMIYA TOSHIO;NOMURA KENJI |
| 分类号 |
H01L29/786;G02F1/1368;H01L21/336 |
主分类号 |
H01L29/786 |
| 代理机构 |
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