发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents crystal defects from occurring in a substrate on which semiconductor chips are mounted and reduces the manufacturing time. <P>SOLUTION: A method of manufacturing a semiconductor device 101 comprises the steps of: forming a first insulating film 14 on a substrate (for example, a first semiconductor chip 10); forming an opening 14B on the first insulating film 14; mounting a second semiconductor chip 12 inside the opening of the first insulating film 14; forming a second insulating film 16 so as to straddle the second semiconductor chip 12 and the first insulating film 14; and then forming a wiring structure 26 on the second insulating film 16. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012248754(A) |
申请公布日期 |
2012.12.13 |
申请号 |
JP20110120759 |
申请日期 |
2011.05.30 |
申请人 |
LAPIS SEMICONDUCTOR CO LTD |
发明人 |
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分类号 |
H01L25/065;H01L23/12;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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