发明名称 |
Method for manufacturing thin film solar cell, involves electrically passivating semiconductor surface according to formation of fixed charges in dielectric layer |
摘要 |
<p>The method involves forming a passivation layer (12) on semiconductor surface (20) of semiconductor layer (2). A buffer layer (11) made of oxide or nitride is provided between passivation layer and semiconductor surface. A cover layer (13) is formed on passivation layer made of aluminum oxide. The band gap of passivation layer is larger than band gap of buffer and cover layers. The charge carriers obtained from semiconductor layer are introduced into dielectric layer (1). The semiconductor surface is electrically passivated according to the formation of fixed charges in dielectric layer.</p> |
申请公布号 |
DE102011051019(A1) |
申请公布日期 |
2012.12.13 |
申请号 |
DE20111051019 |
申请日期 |
2011.06.10 |
申请人 |
Q-CELLS SE |
发明人 |
KUX, ANDREAS;BORDIHN, STEFAN;MERTENS, VERENA;ENGELHART, PETER |
分类号 |
H01L31/18;H01L31/0216 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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