| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which allows suppressing a cost without complicating a manufacturing process by forming a thin-film transistor using an oxide semiconductor film, and to provide a manufacturing method of the semiconductor device. <P>SOLUTION: In a semiconductor device in which a gate electrode is formed on a substrate, a gate insulating film is formed to cover the gate electrode, an oxide semiconductor film is formed on the gate insulating film, and a first conductive film and a second conductive film are formed on the oxide semiconductor film. The oxide semiconductor film has at least a region crystallized in a channel forming region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
