SEMICONDUCTOR EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial substrate which is quick in recovery after high frequency signal interruption, and which is excellent in element isolation characteristics.

SOLUTION: A semiconductor epitaxial substrate comprises: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer. A boundary face between the AlN layer and nitride semiconductor layer has a larger irregularity than that of a boundary face between the single crystal substrate and the AlN layer.

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