| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a nanowire transistor with reduced parasitic resistance and with high performance, and further to provide a manufacturing method thereof. <P>SOLUTION: A semiconductor device comprises: a channel region 3 in a nanowire shape that extends in a first direction; a source region 8 and a drain region 9 that are disposed so as to be spaced apart from each other with the channel region 3 interposed therebetween and have widths greater than that of the channel region 3; an insulating film 2 that is disposed between a substrate and the channel region 3, the source region 8 and the drain region 9 and has regions with thin film thicknesses in recessed shapes; a gate insulating film provided on at least a side surface of a semiconductor layer on the channel region 3; a gate electrode 6 disposed opposite to the semiconductor layer on a first region with respect to the gate insulating film; and a gate side wall 7 that is made of an insulating material and is disposed on a side surface of the gate electrode 6 opposite to the source region 8 and the drain region 9. The semiconductor layer extends to portions of the regions in the recessed shapes just below the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
