NITRIDE SEMICONDUCTOR LASER ELEMENT, EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a clad structure capable of reducing the threshold current in laser oscillation of long wavelength.

SOLUTION: An n-type clad layer 21, an active layer 25 and a p-type clad layer 23 are arranged in the direction of a normal axis NX of a principal surface 17a. The principal surface 17a is inclining in the direction of the m-axis of a hexagonal nitride semiconductor at an angle of ALPHA in the range of 63 degree or more and less than 80 degree with reference to a plane orthogonal to a reference axis Cx extending in the direction of the c-axis of the hexagonal nitride semiconductor. The active layer 25 is provided between the n-type clad layer 21 and the p-type clad layer 23. The active layer 25 is provided to generate light having a peak wavelength in a range of 480 nm or more and 600 nm or less. Refractive indicis of the n-type clad layer 21 and the p-type clad layer 23 are smaller than that of GaN. The n-type clad layer 21 has a thickness Dn of 2 μm or more, and the p-type clad layer 23 has a thickness Dp of 500 nm or more.

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