METHOD FOR PRODUCING FILM COMPRISING SI AND METAL M
摘要
Provided is a method for producing a film comprising Si and a metal M at a more efficient vapor deposition rate. In the method for producing a film comprising Si and a metal M, a film having columnar aggregates is formed on a substrate by vapor deposition using Si and a metal M (where the metal M is a metal other than Si) as the evaporation source. Vapor deposition is performed under the following conditions (1) and (2): (1) the temperature of the evaporation source at the time of vapor deposition is at least 100 K higher than the melting point of the evaporation source; and (2) the mean free path (?) of the Si atoms at the time of vapor deposition is shorter than the distance (D) between the evaporation source and the substrate.
申请公布号
WO2012169625(A1)
申请公布日期
2012.12.13
申请号
WO2012JP64825
申请日期
2012.06.08
申请人
THE UNIVERSITY OF TOKYO;SUMITOMO CHEMICAL COMPANY, LIMITED;NODA, SUGURU;LEE, JUNGHO;YAMAMOTO, TAKETSUGU;MATSUMOTO, SHINGO