NONVOLATILE STORAGE ELEMENT, METHOD OF MANUFACTURING THEREOF, INITIAL BREAKING METHOD, AND NONVOLATILE STORAGE DEVICE

摘要

A nonvolatile storage element (60) according to the present invention is provided with a current control element (50) having a bidirectional rectifying characteristic with respect to an applied voltage, and a resistance changing element (14) connected in series with the current control element (50). The current control element (50) is provided with an MSM diode (1) and an MSM diode (2) that are connected in series, and each of which has a bidirectional rectifying characteristic with respect to an applied voltage. The MSM diode (1) and the MSM diode (2) comprise a lower-section electrode (5), a first current control layer (6), a first metal layer (7), a second current control layer (8), and an upper-section electrode (13) that are laminated in this order. The breakdown current of the current control element (50) is greater than the initial breaking current to flow through the resistance changing element (14) upon initial breaking.