| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high efficiency Group III nitride light emitting diode. <P>SOLUTION: The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and a lenticular surface containing silicon carbide on or above the light emitting region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
