| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, particularly a semiconductor light-emitting element including a current limitation layer. <P>SOLUTION: An aspect of a semiconductor light-emitting element includes: a semiconductor light-emitting multilayer body including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer located between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode having at least one bonding pad formed in a part of a region on a top surface of the first conductivity type semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductivity type semiconductor layer; a plurality of patterns formed between the second conductivity type semiconductor layer and the ohmic contact layer; and a current limitation layer arranged so that the interval of the pattern adjacent to a region overlapping with the bonding pad is smaller than the interval of the pattern in another region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
