TFT SUBSTRATE AND METHOD FOR MANUFACTURING SAME

摘要

A method for manufacturing a TFT substrate comprises the steps of: forming a gate electrode (12) and a gate insulating film (30) on a substrate (8); forming a source electrode (14) and a drain electrode (15) spaced apart from each other and forming a drain connecting part (16) on the gate insulating film (30); forming an oxide semiconductor layer (18, 18a, 18b) including a channel portion (18) where the source electrode (14) and the drain electrode (15) will thereafter be connected, and an additional portion (18a) for covering the drain connecting part (16); oxidizing the surface of the oxide semiconductor layer (18, 18a, 18b); forming a contact hole (22) in an insulating film (32) covering the oxide semiconductor layer; removing the portion of the additional portion (18a) of the oxide semiconductor layer that is inside the contact hole (22); and forming an electroconductive layer (20) electrically connected to the exposed drain connecting part (16).