| 发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a semiconductor element using a wiring in a wiring layer as a gate electrode and having a gate insulation film on the same layer as a diffusion prevention film, and lowers on-resistance of the semiconductor element without hindering functions of the diffusion prevention film. <P>SOLUTION: A semiconductor device comprises: a first wiring layer 150 including an insulation layer on which a first wiring 154 and a gate electrode 210 are buried on a surface layer; a diffusion prevention film 160 formed between the first wiring layer 150 and a second wiring layer 170; and a gate insulation film 230 formed by forming a recess on a top face of the diffusion prevention film 160 in a region overlapping the gate electrode 210 and a region around the overlapping region to make the recess portion thin. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012248582(A) |
申请公布日期 |
2012.12.13 |
| 申请号 |
JP20110117374 |
申请日期 |
2011.05.25 |
| 申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
INOUE HISAYA;KANEKO TAKAAKI;HAYASHI YOSHIHIRO |
| 分类号 |
H01L29/786;H01L21/28;H01L21/283;H01L21/3205;H01L21/336;H01L21/768;H01L21/822;H01L21/8234;H01L23/522;H01L27/00;H01L27/04;H01L27/06;H01L27/088;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
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