| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device using a silicon carbide single crystal substrate which improves initial characteristics of a manufactured silicon carbide semiconductor element by thoroughly removing metal contaminations on a silicon carbide surface, and to provide a method for reducing the metal contaminations and improving long-period reliability of the semiconductor device. <P>SOLUTION: In a method of manufacturing a semiconductor device using a silicon carbide single crystal substrate, a metal contamination removing process on a silicon carbide surface is applied, the removing process comprises the steps of: oxidizing the silicon carbide surface; and removing a film mainly composed of silicon dioxide, where the film is formed on the silicon carbide surface in the step of oxidizing. <P>COPYRIGHT: (C)2013,JPO&INPIT |
