One embodiment provides a semiconductor device having: a core substrate having first and second surfaces and an accommodation hole penetrating therethrough; a semiconductor element accommodated in the accommodation hole so that a front surface thereof is on the first surface side; a first metal film formed on a back surface of the semiconductor element; a second metal film formed on the second surface of the core substrate; an insulating layer covering the first and second metal films; and a third metal film formed on the insulating layer, via parts thereof penetrating through the insulating layer to respectively reach the first and second metal films.
申请公布号
US2012313245(A1)
申请公布日期
2012.12.13
申请号
US201213493123
申请日期
2012.06.11
申请人
HORIUCHI MICHIO;TOKUTAKE YASUE;MATSUDA YUICHI;SHINKO ELECTRIC INDUSTRIES CO., LTD.