发明名称 |
NONVOLATILE MEMORY DEVICES, NONVOLATILE MEMORY CELLS AND METHODS OF MANUFACTURING NONVOLATILE MEMORY DEVICES |
摘要 |
A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.
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申请公布号 |
US2012313066(A1) |
申请公布日期 |
2012.12.13 |
申请号 |
US201213442595 |
申请日期 |
2012.04.09 |
申请人 |
PARK CHAN-JIN;KIM SUN-JUNG;PARK SOON-OH;JU HYUN-SU;CHAE SOO-DOO |
发明人 |
PARK CHAN-JIN;KIM SUN-JUNG;PARK SOON-OH;JU HYUN-SU;CHAE SOO-DOO |
分类号 |
H01L47/00;H01L21/02 |
主分类号 |
H01L47/00 |
代理机构 |
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