发明名称 |
EMITTER STRUCTURE AND FABRICATION METHOD FOR SILICON HETEROJUNCTION SOLAR CELL |
摘要 |
A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type, and growing a doped amorphous or nanocrystalline passivation layer of a second conductivity type that is opposite to the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.
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申请公布号 |
US2012312361(A1) |
申请公布日期 |
2012.12.13 |
申请号 |
US201113155996 |
申请日期 |
2011.06.08 |
申请人 |
HEKMATSHOAR-TABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEKMATSHOAR-TABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
分类号 |
H01L31/06;H01L31/0224 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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