发明名称 MAGNETIC STICK AND MEMORY CELL COMPRISING SUCH A STACK
摘要 A magnetic stack with out of plane magnetisation, the magnetic stack including: a first magnetic layer constituted of one or more materials selected from the following group: cobalt, iron and nickel and magnetic alloys based on the materials; a second layer constituted of a metallic material able to confer to an assembly formed by the first and the second layers a perpendicular anisotropy of interfacial origin when the second layer has a shared interface with the first layer; and a third layer deposited on the first layer, the second layer being deposited on the third layer, the third layer being constituted of a metallic material having a miscibility less than 10% with the material of the first layer.
申请公布号 US2012313192(A1) 申请公布日期 2012.12.13
申请号 US201213491131 申请日期 2012.06.07
申请人 BANDIERA SEBASTIEN;DIENY BERNARD;RODMACQ BERNARD;COMMISSARIAT A I' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 BANDIERA SEBASTIEN;DIENY BERNARD;RODMACQ BERNARD
分类号 H01L43/10 主分类号 H01L43/10
代理机构 代理人
主权项
地址