SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

Provided are a semiconductor structure and a manufacturing method thereof. The method includes the following steps: providing a substrate, with a first high k dielectric layer, an adjustment layer, a second high k dielectric layer and a metal gate being successively formed thereon; and etching the first high k dielectric layer, the adjustment layer, the second high k layer and the metal gate to form a gate stack. Correspondingly, also provided is a semiconductor structure. In the present invention, by way of setting the adjustment layer between the two high k dielectric layers, the semiconductor performance effectively avoids being reduced because of the reaction caused by direct contact between the adjustment layer and the metal gate.