| 摘要 |
<P>PROBLEM TO BE SOLVED: To polish a non-oxide single crystal substrate, such as a silicon carbide single crystal substrate, with high polishing speed, thereby obtaining a high quality surface smooth and excellent in surface characteristics even at an atomic level of a crystal. <P>SOLUTION: A polishing agent for chemically mechanically polishing a non-oxide single crystal substrate contains: an oxidant including transition metal having an oxidation reduction potential of 0.5 V or greater; a cerium oxide particle having an average secondary particle size of 0.5 μm or less; and a dispersion medium. In the polishing agent of the present invention, the oxidant is preferably a permanganate ion. The polishing agent has preferably a pH of 11 or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
