SEMICONDUCTOR DEVICE INCLUDING DOUBLE GATE ELECTRODE STRUCTURE, AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a double gate electrode structure, that can increase the on current while minimizing the generation of leakage current, and provide a manufacturing method for the semiconductor device.

SOLUTION: A semiconductor device includes: a gate electrode disposed on a substrate; a first impurity implantation region and a second impurity implantation region disposed on the substrate so that each is disposed adjacent to each end of the gate electrode; and a channel region disposed between the first impurity implantation region and the second impurity implantation region. The gate electrode includes a first sub-gate electrode adjacent to the first impurity implantation region and a second sub-gate electrode adjacent to the second impurity implantation region. The first sub-gate electrode and the second sub-gate electrode are disposed on the channel region. In this semiconductor device, one channel region is independently controlled by the two sub-gates, so that the generation of leakage current can be minimized.

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