| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device, a semiconductor memory package, and a method of increasing the density of the semiconductor memory device. <P>SOLUTION: Each semiconductor memory device comprises: a volatile memory cell which is formed at a power-of-two bit density; and an input/output terminal for inputting and outputting data of the volatile memory cell. It also comprises: a plurality of memory areas for which an interim density is provided by forming them on one chip; and at least one peripheral area that controls, on the basis of a command or address that is input from the outside, the operation of writing data to the plurality of memory areas or reading data from the plurality of memory areas. Thus, the semiconductor memory device can have the interim density, that is a density of 2<SP POS="POST">m</SP>+2<SP POS="POST">n</SP>+2<SP POS="POST">o</SP>... (wherein m, n, and o are integers equal to or greater than 0, and different from each other). <P>COPYRIGHT: (C)2013,JPO&INPIT |
