发明名称 GAS PREHEATING CYLINDER, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a gas introduction path which improves the heating efficiency of a film forming gas and heats the film forming gas to a temperature equivalent to the temperature of a processing substrate. <P>SOLUTION: A gas flowing through a gas supply pipe 340 flows from a gas introduction port 342 of a gas preheating cylinder 360 to a gas passage 374 in the gas preheating cylinder 360. An inner tube 350 inductively heated by an electromagnetic induction coil 207 heats the gas preheating cylinder 360 before a gas flowing through the gas passage 374 reaches a gas lead-out port 364 of the gas preheating cylinder 360, and the gas flowing through the gas passage 374 is evenly heated. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012248675(A) 申请公布日期 2012.12.13
申请号 JP20110119164 申请日期 2011.05.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ISHII AKINORI;HIRANO MAKOTO;TANIUCHI MASAMICHI
分类号 H01L21/205;C23C16/452;H01L21/31 主分类号 H01L21/205
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