发明名称 |
GAS PREHEATING CYLINDER, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas introduction path which improves the heating efficiency of a film forming gas and heats the film forming gas to a temperature equivalent to the temperature of a processing substrate. <P>SOLUTION: A gas flowing through a gas supply pipe 340 flows from a gas introduction port 342 of a gas preheating cylinder 360 to a gas passage 374 in the gas preheating cylinder 360. An inner tube 350 inductively heated by an electromagnetic induction coil 207 heats the gas preheating cylinder 360 before a gas flowing through the gas passage 374 reaches a gas lead-out port 364 of the gas preheating cylinder 360, and the gas flowing through the gas passage 374 is evenly heated. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012248675(A) |
申请公布日期 |
2012.12.13 |
申请号 |
JP20110119164 |
申请日期 |
2011.05.27 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
ISHII AKINORI;HIRANO MAKOTO;TANIUCHI MASAMICHI |
分类号 |
H01L21/205;C23C16/452;H01L21/31 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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