发明名称 |
Forming Features on a Substrate Having Varying Feature Densities |
摘要 |
A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material to expose portions of the substrate using a planarizing process, and removing residual portions of the conductive material disposed on the substrate using a reactive ion etch (RIE) process.
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申请公布号 |
US2012313250(A1) |
申请公布日期 |
2012.12.13 |
申请号 |
US201113155776 |
申请日期 |
2011.06.08 |
申请人 |
DEGRAW DANIELLE L.;SULLIVAN CANDACE A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DEGRAW DANIELLE L.;SULLIVAN CANDACE A. |
分类号 |
H01L21/283;H01L21/304;H01L21/306;H01L23/48 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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