发明名称 Forming Features on a Substrate Having Varying Feature Densities
摘要 A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material to expose portions of the substrate using a planarizing process, and removing residual portions of the conductive material disposed on the substrate using a reactive ion etch (RIE) process.
申请公布号 US2012313250(A1) 申请公布日期 2012.12.13
申请号 US201113155776 申请日期 2011.06.08
申请人 DEGRAW DANIELLE L.;SULLIVAN CANDACE A.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DEGRAW DANIELLE L.;SULLIVAN CANDACE A.
分类号 H01L21/283;H01L21/304;H01L21/306;H01L23/48 主分类号 H01L21/283
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