SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device of which: the first source and first drain of a first MISFET having a first channel type formed on a first semiconductor crystal layer comprise a compound of the atoms constituting the first semiconductor crystal layer and nickel atoms, a compound of the atoms constituting the first semiconductor crystal layer and cobalt atoms, or a compound of the atoms constituting the first semiconductor crystal layer, nickel atoms, and cobalt atoms; and the second source and second drain of a second MISFET having a second channel type formed on a second semiconductor crystal layer comprise a compound of the atoms constituting the second semiconductor crystal layer and nickel atoms, a compound of the atoms constituting the second semiconductor crystal layer and cobalt atoms, or a compound of the atoms constituting the second semiconductor crystal layer, nickel atoms, and cobalt atoms.