| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of forming a resistance element with desired characteristics by using a silicon film while suppressing an increase in area. <P>SOLUTION: In a manufacturing method of a semiconductor device, a resist film is selectively formed on a gate multilayer structure film 100a and on a gate side wall insulating film 7 that are extending on a semiconductor substrate 1. An upper portion of the gate side wall insulating film and a hard mask film are selectively removed by etching using the resist film as a mask to expose a surface of a metal film. In a resistance element region 1000, a metal film and a barrier metal film connected to the metal film are removed by wet etching in a region from a surface from which the metal film is exposed to a region in which the hard mask film remains on a silicon film, and subsequently the resist film is removed. After the resist film is removed, an embedding insulating film is deposited to a height higher than a level of a top surface of the remaining hard mask film. An upper portion of the embedding insulating film is planarized by a CMP method using the remaining hard mask film as a stopper. <P>COPYRIGHT: (C)2013,JPO&INPIT |
