发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To prevent electrostatic discharge damage in a mold using a film and improve a quality of an outer appearance of a seal section and reliability of products. <P>SOLUTION: A device employed for manufacturing a semiconductor integrated circuit device comprises: an upper mold 11 and a lower mold 12; a loader section 13 for setting a chip assembly 7 in a frame alignment section 16; a frame takeoff section 17 for grasping the chip assembly 7 and peeling off the chip assembly 7 from a lower film 9 on the lower mold 12 after completion of a mold opening posterior to filling of a molding resin and further carrying the chip assembly 7 to a frame housing section 14; the frame housing section 14 for housing the chip assembly 7 which has been molded; a film static elimination section 25 for eliminating static electricity from an upper film 8 and the lower film 9; a mold static elimination section for eliminating static electricity from the metal mold 10; and a product static elimination section 27 for eliminating static electricity from the molded chip assembly 7. The device prevents electrostatic discharge damage by performing a molding process while eliminating static electricity from the film, the metal mold 10 and products. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012248905(A) 申请公布日期 2012.12.13
申请号 JP20120207763 申请日期 2012.09.21
申请人 RENESAS ELECTRONICS CORP 发明人 KURATOMI BUNJI;KAWADA YOICHI
分类号 H01L21/56 主分类号 H01L21/56
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