| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor substrate capable of reducing the possibility that side etching may occur. <P>SOLUTION: After the formation of an insulating film, a wiring pattern is formed before the formation of a seed film. Next, after the formation of the seed film, a resist for wiring pattern is peeled off. Subsequently, after a plated mask resist is formed, a wiring pattern is formed by a plating current from a surface of a semiconductor substrate without need for a wet etching method. <P>COPYRIGHT: (C)2013,JPO&INPIT |
