| 摘要 |
A semiconductor storage device includes a semiconductor substrate and an active area on the semiconductor substrate. A plurality of cell transistors are formed on the active area. A first bit line and a second bit line are paired with each other. A plurality of word lines intersect the first and second bit lines. A plurality of storage elements respectively has a first end electrically connected to a source or a drain of one of the cell transistors and a second end connected to the first or second bit line. Both of the first and second bit lines are connected to the same active area via the storage elements.
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