| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a hybrid MOSFET device that includes a first MOSFET and a second MOSFET having a first channel material and a second channel material, respectively. <P>SOLUTION: A III-V-on insulator stack is formed on a second substrate connected to a first substrate. A III-V layer 103 and an insulator layer are selectively removed from a first region, thereby a semiconductor layer of the first substrate is exposed. A first gate stack 109 of the first MOSFET is formed on the exposed semiconductor layer in the first region. A second gate stack 109'' of the second MOSFET is formed on the III-V layer in the second region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
