| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stabilizing forward characteristics of a diode, specifically a barrier height ϕB thereof, to reduce variation in leakage current, in manufacturing a silicon carbide Schottky diode. <P>SOLUTION: A method for manufacturing a silicon carbide semiconductor device includes the successive steps of: forming a silicon oxide film OX1 on an epitaxial layer 2 by dry thermal oxidation; forming an ohmic electrode 3 on a back surface of an SiC substrate 1; annealing the SiC substrate 1 to form an ohmic junction between the ohmic electrode 3 and the back surface of the SiC substrate 1; forming a Schottky electrode 4 on the epitaxial layer 2 after removing the silicon oxide film OX1; and performing sintering to form a Schottky junction between the Schottky electrode 4 and the epitaxial layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
