| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a bonded wafer capable of manufacturing bonded wafers, in which the film thickness uniformity of a thin film on a base wafer, especially, that of an SOI layer is enhanced, at a mass production level. <P>SOLUTION: The manufacturing method of a bonded wafer includes an ion implantation step using a batch ion implanter, a bonding step for bonding the ion-implanted surface of a bond wafer and the surface of a base wafer directly or via an insulating film, and a peeling step for preparing a bonded wafer having a thin film on the base wafer by peeling the bond wafer in the ion implantation layer. Ion implantation into the bond wafer is carried out several times in the ion implantation step, and after each ion implantation, the bond wafer is rotated by a predetermined rotation angle, and next ion implantation is carried out at an arrangement position thus rotated. <P>COPYRIGHT: (C)2013,JPO&INPIT |
