发明名称 POLYGON SHAPED POWER AMPLIFIER CHIPS
摘要 A semiconductor structure having: a wafer; and a plurality of chips disposed on the wafer, each one of the chips having a linear array of a plurality of transistors, the linear array being at an oblique angle with respect to grid lines in the wafer separating the chips. Each one of the transistors has a plurality of parallel control electrodes extending longitudinally along an axis perpendicular to the axis along which the plurality of transistors is distributed. A matching circuit is disposed on the integrated circuit chip between a corner of the integrated circuit chip and the plurality of transistors.
申请公布号 US2012313213(A1) 申请公布日期 2012.12.13
申请号 US201113154953 申请日期 2011.06.07
申请人 RAYTHEON COMPANY 发明人 HEAD PAUL M.;BORKOWSKI MICHAEL T.;HALLOCK ROBERT B.
分类号 H01L27/088 主分类号 H01L27/088
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