发明名称 MODULAR DIE AND MASK FOR SEMICONDUCTOR PROCESSING
摘要 Modular dies and modular masks for the manufacture of semiconductor devices are described. The modular mask can be used repeatedly to make multiple, substantially-similar modular dies. The modular die contains a substrate with an integrated circuit and a conductive layer containing a source metal and a gate metal connected respectively to the source and gate of the integrated circuit. The gate metal is located in an outer portion of the modular die. The modular die can be made by providing the integrated circuit in first and second portions of the substrate, providing the conductive layer on both first and second portions, making a first modular die by patterning the conductive layer on the first portion using the modular mask, moving the mask to the second portion and using it to make a second modular die by patterning the conductive layer on the second portion. Other embodiments are described.
申请公布号 US2012313179(A1) 申请公布日期 2012.12.13
申请号 US201213493770 申请日期 2012.06.11
申请人 CROFT SCOTT 发明人 CROFT SCOTT
分类号 H01L27/105;G03F1/00 主分类号 H01L27/105
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