发明名称 Surface Plasma Gas Processing
摘要 The invention relates to a gas processing unit adapted for generating a surface plasma in the vicinity of a photocatalyst, that has a planar configuration. The photocatalyst is deposited in the form of a thin layer on a dielectric substrate and at least one plasma supply electrode is formed above the photocatalyst thin layer. Such a configuration increases the interaction between the plasma and the photocatalyst. The unit can be used for a gas processing of the pollution-control, odour reduction or bactericidal treatment type with a high efficiency.
申请公布号 US2012315194(A9) 申请公布日期 2012.12.13
申请号 US20100652857 申请日期 2010.01.06
申请人 ROUSSEAU ANTOINE;ALLEGRAUD KATIA;GUAITELLA OLIVIER;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE-CRNS-;ECOLE POLYTECHNIQUE 发明人 ROUSSEAU ANTOINE;ALLEGRAUD KATIA;GUAITELLA OLIVIER
分类号 A61L9/22;A61L9/16;B01J19/08;B01J35/00;B01J37/34;B32B37/02;B32B38/04;B32B38/14 主分类号 A61L9/22
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