发明名称 |
Surface Plasma Gas Processing |
摘要 |
The invention relates to a gas processing unit adapted for generating a surface plasma in the vicinity of a photocatalyst, that has a planar configuration. The photocatalyst is deposited in the form of a thin layer on a dielectric substrate and at least one plasma supply electrode is formed above the photocatalyst thin layer. Such a configuration increases the interaction between the plasma and the photocatalyst. The unit can be used for a gas processing of the pollution-control, odour reduction or bactericidal treatment type with a high efficiency. |
申请公布号 |
US2012315194(A9) |
申请公布日期 |
2012.12.13 |
申请号 |
US20100652857 |
申请日期 |
2010.01.06 |
申请人 |
ROUSSEAU ANTOINE;ALLEGRAUD KATIA;GUAITELLA OLIVIER;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE-CRNS-;ECOLE POLYTECHNIQUE |
发明人 |
ROUSSEAU ANTOINE;ALLEGRAUD KATIA;GUAITELLA OLIVIER |
分类号 |
A61L9/22;A61L9/16;B01J19/08;B01J35/00;B01J37/34;B32B37/02;B32B38/04;B32B38/14 |
主分类号 |
A61L9/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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