| 发明名称 |
SEMICONDUCTOR DEVICE WITH ENHANCED MOBILITY AND METHOD |
| 摘要 |
In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor. |
| 申请公布号 |
US2012313161(A1) |
申请公布日期 |
2012.12.13 |
| 申请号 |
US201113159255 |
申请日期 |
2011.06.13 |
| 申请人 |
GRIVNA GORDON M.;HOSSAIN ZIA;HUANG KIRK K.;PADMANABHAN BALAJI;ROBB FRANCINE Y.;VENKATRAMAN PRASAD |
发明人 |
GRIVNA GORDON M.;HOSSAIN ZIA;HUANG KIRK K.;PADMANABHAN BALAJI;ROBB FRANCINE Y.;VENKATRAMAN PRASAD |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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