| 发明名称 |
RECESSED GATE FIELD EFFECT TRANSISTOR |
| 摘要 |
A semiconductor device having a gate positioned in a recess between the source region and a drain region that are adjacent either side of the gate electrode. A channel region is below a majority of the source region as well as a majority of the drain region and the entire gate electrode. |
| 申请公布号 |
US2012313144(A1) |
申请公布日期 |
2012.12.13 |
| 申请号 |
US201213494965 |
申请日期 |
2012.06.12 |
| 申请人 |
ZHANG JOHN H.;CLEVENGER LAWRENCE A.;RADENS CARL;XU YIHENG;INTERNATIONAL BUSINESS MACHINES;STMICROELECTRONICS, INC. |
发明人 |
ZHANG JOHN H.;CLEVENGER LAWRENCE A.;RADENS CARL;XU YIHENG |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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