发明名称 GATE DRIVE CIRCUIT OF VOLTAGE-CONTROLLED SWITCHING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a gate drive circuit of a voltage-controlled switching element in which occurrence of malfunction can be minimized while suppressing the surge voltage/surge current and switching noise, when switching the voltage-controlled switching element. <P>SOLUTION: The gate drive circuit which drives a voltage-controlled switching element 2 by supplying a gate voltage to the gate thereof comprises a high potential side switching element M1 and a low potential side switching element M2 connected in series, first variable resistors VR11, VR12 inserted either between the high potential side switching element M1 and a high potential power supply and/or between the low potential side switching element M2 and a low potential power supply, and a control circuit 4 which adjusts the resistance of the first variable resistors VR11, VR12. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012249357(A) 申请公布日期 2012.12.13
申请号 JP20110116924 申请日期 2011.05.25
申请人 FUJI ELECTRIC CO LTD 发明人 SUGAWARA SATOSHI
分类号 H02M1/08 主分类号 H02M1/08
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