| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing channel resistance and increasing ON-state current, and making each transistor operate independently and stably, and provide a manufacturing method of the same. <P>SOLUTION: A semiconductor device comprises a first impurity diffusion region 27 provided at a bottom of a gate electrode trench 18, a second impurity diffusion region 28 provided on a semiconductor substrate 13 so as to cover an upper part 21A of a gate insulation film 21 arranged on a first lateral face 18a, and a third impurity diffusion region 29 provided on the semiconductor substrate 13 so as to cover the gate insulation film 21 arranged at least on a second lateral face 18b and joined with the first impurity diffusion region 27. <P>COPYRIGHT: (C)2013,JPO&INPIT |
