| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device with reduced deterioration in reliability due to miniaturization. <P>SOLUTION: A semiconductor storage device according to an embodiment comprises a NAND cell unit including a plurality of electrically rewritable non-volatile memory cells each including a floating gate and a control gate on a semiconductor substrate. In the NAND cell unit, the non-volatile memory cells share a source region and a drain region, and are connected in series. The source region and the drain region of the non-volatile memory cells are formed using a silicide. <P>COPYRIGHT: (C)2013,JPO&INPIT |
