INTELLIGENT SHIFTING OF READ PASS VOLTAGES FOR NON-VOLATILE STORAGE
摘要
A first read pass voltage is determined and optimized for cycled memory. One or more starting read pass voltages are determined for one or more dies. The system dynamically calculates a current read pass voltage based on the number of program/erase erase cycles, the first read pass voltage and the respective starting read pass voltage. Data is read from one or more non-volatile storage elements using the calculated current read pass voltage.
申请公布号
WO2012170282(A1)
申请公布日期
2012.12.13
申请号
WO2012US40311
申请日期
2012.05.31
申请人
SANDISK TECHNOLOGIES, INC.;YUAN, JIAHUI;DONG, YINGDA;KWONG, CHARLES