| 摘要 |
<p>The present invention relates to the formulation of a chemical, comprised of an ether solvent as the principal solvent, an ether or non-ether cosolvent, an acid, optionally a surfactant and optionally a corrosion inhibitor, dedicated to the complete and selective stripping by pure dissolution of photoresists (novolac and semi-novolac) of all thicknesses used in microelectronic component integration processes. Said solution is optimized to dissolve the polymer matrix while ensuring and protecting the physicochemical integrity of exposed materials such as metal interconnections (copper, aluminum), dielectrics (SiO2, MSQ, etc.) and adhesion and diffusion barriers (TiN, Ti, Ta, TaN, etc.). Furthermore, the singular cleaning properties and performance characteristics of these solutions make it possible to envisage the use thereof in a variety of industrial applications such as single wafer, batch, immersion and/or spray by simple adjustment of process time and temperature.</p> |
